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Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

Writam Banerjee, Siddheswar Maikap*, Chao-Sung Lai, Yi-Yan Chen, Ta-Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Frederick T Chen, Ming-Jer Kao, Ming-Jinn Tsai and Jer-Ren Yang

Nanoscale Research Letters 2012, 7:194  doi:10.1186/1556-276X-7-194

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