Figure 4.

MOS samples, B-doped Si-rich oxide and P-doped Si-rich oxide. MOS samples as shown in (a), with C-V curve fitting for (b) B-doped Si-rich oxide showing accumulation for negative bias and hence p-type behaviour and (c) P-doped Si-rich oxide showing inversion for negative bias and hence n-type behaviour. The calculated curves use an MOS model with p- and n-type material respectively. The clear change of sign shows the opposite carrier type for B and P doping [14].

Conibeer et al. Nanoscale Research Letters 2012 7:193   doi:10.1186/1556-276X-7-193
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