Figure 3.

Room temperature absorption coefficient of annealed SiOx/SiO2 multilayer films with various x (1,100°C, 1 h; [11]). There is a strongly absorbing region at energies above 3 eV, in which absorption increases with the Si content of the layers, and a weakly absorbing region at less than 3 eV, which is not strongly affected by Si content.

Conibeer et al. Nanoscale Research Letters 2012 7:193   doi:10.1186/1556-276X-7-193
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