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Effect of non-lattice oxygen on ZrO2-based resistive switching memory

Chun-Chieh Lin1*, Yi-Peng Chang1, Huei-Bo Lin1 and Chu-Hsuan Lin2

Author Affiliations

1 Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan

2 Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien, 97401, Taiwan

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Nanoscale Research Letters 2012, 7:187  doi:10.1186/1556-276X-7-187

Published: 14 March 2012


ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO2 film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO2 film. In addition, the Al/ZrO2/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.

ZrO2; resistive switching memory; non-lattice oxygen; retention time; resistive switching mechanism