Open Access Nano Express

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

Fu-Chien Chiu1*, Peng-Wei Li1 and Wen-Yuan Chang2

Author affiliations

1 Department of Electronic Engineering, Ming-Chuan University, Taoyuan, 333, Taiwan

2 Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan

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Citation and License

Nanoscale Research Letters 2012, 7:178  doi:10.1186/1556-276X-7-178

Published: 8 March 2012

Abstract

In this work, bipolar resistive switching characteristics were demonstrated in the Pt/ZnO/Pt structure. Reliability tests show that ac cycling endurance level above 106 can be achieved. However, significant window closure takes place after about 102 dc cycles. Data retention characteristic exhibits no observed degradation after 168 h. Read durability shows stable resistance states after 106 read times. The current transportation in ZnO films is dominated by the hopping conduction and the ohmic conduction in high-resistance and low-resistance states, respectively. Therefore, the electrical parameters of trap energy level, trap spacing, Fermi level, electron mobility, and effective density of states in conduction band in ZnO were identified.

Keywords:
ZnO; resistive switching; reliability; electrical parameters