Figure 8.

Endurance characteristics. The endurance characteristic to 104 cycles operation for Gd2O3-NC memories with nanostructure (DL_1 (2 nm)) and single (SiO2) tunneling layer. The P/E conditions are 8 V, 1 ms and -9 V, 1 s, respectively.

Wang et al. Nanoscale Research Letters 2012 7:177   doi:10.1186/1556-276X-7-177
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