The band diagrams of Gd2O3-NC memories with nanostructure at (a) retention and (b) programming states. The bandgaps of HfO2 and Al2O3 are assumed to be 6.1 and 8.7 eV, respectively [22,23]. The charge loss paths of shallow traps and deep traps are pointed out by arrow signs in (a); the charge injection paths when applying gate voltage is drawn by arrow signs in (b).
Wang et al. Nanoscale Research Letters 2012 7:177 doi:10.1186/1556-276X-7-177