Figure 5.

Programming (a) and erasing (b) characteristic of Gd2O3-NC memories with nanostructure tunneling layer. Insets show the extracted VFB shift of various P/E voltages at 1 ms/1 s.

Wang et al. Nanoscale Research Letters 2012 7:177   doi:10.1186/1556-276X-7-177
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