Figure 3.

The C-V hysteresis of capacitor structure Al/HfO2/Al2O3/SiO2/Si for two different HfO2 thicknesses. Inset shows the J-V characteristic of the same capacitor structure. The gate voltage of the C-V hysteresis was swept from -3 to +3 V and then swept back. All the gate voltages were normalized with the VFB of the forward (-3 to +3V) C-V curve (VFBf).

Wang et al. Nanoscale Research Letters 2012 7:177   doi:10.1186/1556-276X-7-177
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