Figure 1.

The schematic structure of Gd2O3-NC memories with nanostructure tunneling layer. There are four samples in this experiment. Two samples for the nanostructure HfO2/Al2O3 layer with 2 and 5 nm HfO2, respectively. Two samples for the SiO2 and Al2O3 single tunneling layers, respectively.

Wang et al. Nanoscale Research Letters 2012 7:177   doi:10.1186/1556-276X-7-177
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