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Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

Chairul Hudaya12, Ji Hun Park13 and Joong Kee Lee1*

Author Affiliations

1 Advanced Energy Materials Processing Laboratory, Energy Storage Research Center, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seongbuk-gu, Seoul, 136-791, Republic of Korea

2 Department of Clean Energy and Chemical Engineering, University of Science and Technology, 176 Gajungro Yuseong-gu, Daejeon, 305-350, Republic of Korea

3 Department of Advanced Material Engineering, Korea University, Seongbuk-gu, Seoul, 136-701, Republic of Korea

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Nanoscale Research Letters 2012, 7:17  doi:10.1186/1556-276X-7-17

Published: 5 January 2012


An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

process parameters; FTO; thin film; ECR-MOCVD; sheet resistance uniformity