Figure 1.

The schematic diagram of simulated 2D Si structure. Length of the channel is Lc, average thickness is Tb and roughness parameters are: amplitude (A0) & periodicity (λ). The bias is applied to nullify the current due to temperature gradient.

Kumar et al. Nanoscale Research Letters 2012 7:169   doi:10.1186/1556-276X-7-169
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