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Resolution: standard / high Figure 5.
Erase properties of the JL and IM NW SONOS cells. Before erasing, the cells were programmed to Vth shift of +3 V and +2.5 V for the JL and IM structures, respectively.
Su et al. Nanoscale Research Letters 2012 7:162 doi:10.1186/1556-276X-7-162 |
