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Resolution: standard / high Figure 3.
Programming properties of the JL and IM NW SONOS devices. (a) Programming characteristics at gate biases of 9, 11, and 13 V. (b) Evolution of the ID-VG curves for the JL device during programming at 13 V from 1 μs to 1 ms.
Su et al. Nanoscale Research Letters 2012 7:162 doi:10.1186/1556-276X-7-162 |
