Figure 3.

Programming properties of the JL and IM NW SONOS devices. (a) Programming characteristics at gate biases of 9, 11, and 13 V. (b) Evolution of the ID-VG curves for the JL device during programming at 13 V from 1 μs to 1 ms.

Su et al. Nanoscale Research Letters 2012 7:162   doi:10.1186/1556-276X-7-162
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