|
Resolution: standard / high Figure 2.
SEM and TEM characterization of a fabricated JL poly-Si NW device. (a) Top-view SEM image. (b) Cross-sectional TEM image of the NW channel in (a).
Su et al. Nanoscale Research Letters 2012 7:162 doi:10.1186/1556-276X-7-162 |
