A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
1 Nano Facility Center, National Chiao Tung University, Hsinchu, 300, Taiwan
2 Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan
3 Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan
4 National Nano Device Laboratories, 26 Prosperity Road I, Hsinchu, 300, Taiwan
Nanoscale Research Letters 2012, 7:162 doi:10.1186/1556-276X-7-162Published: 29 February 2012
In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications.