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Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces

Li-Gong Li12, Shu-Man Liu1*, Shuai Luo1, Tao Yang1, Li-Jun Wang1, Feng-Qi Liu1, Xiao-Ling Ye1, Bo Xu1 and Zhan-Guo Wang1

Author Affiliations

1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China

2 Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China

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Nanoscale Research Letters 2012, 7:160  doi:10.1186/1556-276X-7-160

Published: 28 February 2012


InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized.

PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea