Table 1

Samples

Sample

Metal organic line pressure (Torr)

Nanowire diameter (nm)

Gate-to-nanowire distance (nm)

Gate length (nm)

Source-to-drain distance (nm)


a

0

29

120

750

1,200


b

0.05

33

140

700

1,200


c

0.1

39

140

750

1,250


d

0.2

40

160

870

1,400


e

0.4

80

140

1,700

2,500


Average geometrical values for FET devices based on InAs nanowires having different diameters and grown under different DtBSe precursor line pressures. The NW diameters have been measured at the center of the NW axis.

Viti et al. Nanoscale Research Letters 2012 7:159   doi:10.1186/1556-276X-7-159

Open Data