|
Resolution: standard / high Figure 5.
On/off current ratio Ion/Ioff as a function of the gate bias. Panel (a) refers to the investigated set of samples a, b, c, d, and e. Inset: maximum value
of the on/off current ratio plotted as a function of the DtBSe precursor line pressure.
Panel (b) was measured for FET devices having identical growth conditions and geometries of
sample c with gate-to-nanowire distances of 290 (curve 3), 125 (curve 2), and 70 nm
(curve 1), respectively.
Viti et al. Nanoscale Research Letters 2012 7:159 doi:10.1186/1556-276X-7-159 |
