Figure 3.

Electrical transport characteristics of the transistors. Patterns a, b, c, d, and e refer to current-voltage (Isd-Vds) characteristics measured at different gate voltages Vg, at room temperature for samples a, b, c, d, and e, respectively; Patterns f, g, h, i, and l refer to Isd-Vg transfer characteristic measured for samples a, b, c, d, and e at room temperature and at a drain-to-source voltage Vds = 0.025 V.

Viti et al. Nanoscale Research Letters 2012 7:159   doi:10.1186/1556-276X-7-159
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