Figure 3.

Electrical transport characteristics of the transistors. Patterns a, b, c, d, and e refer to current-voltage (I_sd-V_ds) characteristics measured at different gate voltages V_g, at room temperature for samples a, b, c, d, and e, respectively; Patterns f, g, h, i, and l refer to I_sd-V_g transfer characteristic measured for samples a, b, c, d, and e at room temperature and at a drain-to-source voltage V_ds = 0.025 V.