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Resolution: standard / high Figure 2.
SEM image of a field effect transistor based on an InAs nanowire. The red arrows indicate the source-to-drain distance (l), the gate length (w) and the gate-to-nanowire distance (d).
Viti et al. Nanoscale Research Letters 2012 7:159 doi:10.1186/1556-276X-7-159 |
