Table 1 |
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Atomic structure parameters of bulk SiO2, clean SiO2(0001) surface, and graphene/SiO2(0001) interface |
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|
Measurement |
Bulk SiO2 |
Clean SiO2 slab |
Graphene/SiO2 (structure A) |
|
|
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d0 (Å) |
2.820 |
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|
d1 (Å) |
1.798 |
1.685 |
1.619 |
|
l0 (Å) |
1.596 |
1.620 |
1.616 |
|
α1 (°) |
146.529 |
137.140 |
135.932 |
|
lC-C (Å) |
1.430 |
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|
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d1 is the distance between the first and the second Si atom layers; l0 is the length of Si-O bond on the surface or interface; α1 is the value of the Si-O-Si angle; lC-C is the average bond length of C-C. |
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Ao et al. Nanoscale Research Letters 2012 7:158 doi:10.1186/1556-276X-7-158 |
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