The mask behavior of the structurally disturbed Si(100) surface in KOH solution. (a) Mesa produced by 10 cycles of scanning scratch under Fn = 50 μN on the Si(100) surface. (b) AFM image of the mesa area after etching in 10 wt.% HF solution for 3 min to remove surface oxidation layer. (c) AFM image of the mesa area after etching in 20 wt.% KOH + IPA solution for 2 min.
Guo et al. Nanoscale Research Letters 2012 7:152 doi:10.1186/1556-276X-7-152