Figure 7.

Fabrication of nanopatterns on Si(100) surface by friction-induced selective etching technique. (a) Protrusive array of nanolines by line scratch under Fn = 2 mN and post-etching in 20 wt.% KOH + IPA solution for 2 min. (b) Protrusive array of nano-mesas produced by scanning scratch under Fn = 15 μN and post-etching in 20 wt.% KOH + IPA solution for 2 min. (c) Nano-ring produced by scanning scratch under Fn = 20 μN and post-etching in 20 wt.% KOH + IPA solution for 2 min. (d) Nanoword TRI produced by scanning scratch under Fn = 20 μN and post-etching in 20 wt.% KOH + IPA solution for 1 min. The native oxidation layer on the Si(100) surface was removed by HF etching before scratching.

Guo et al. Nanoscale Research Letters 2012 7:152   doi:10.1186/1556-276X-7-152
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