The etching mask behavior of the distorted silicon layer on groove structure. (a) Groove produced by one cycle of line scratch under Fn = 5 mN on the Si(100) surface. (b) AFM image of the scratched area after etching in 10 wt.% HF solution for 15 min to remove surface oxidation layer. (c) AFM image of the scratched area after etching in 20 wt.% KOH + IPA solution for 25 min.
Guo et al. Nanoscale Research Letters 2012 7:152 doi:10.1186/1556-276X-7-152