Figure 5.

Effects of etching time on height of the nanostructure on Si(100) surface by scratching and post-etching. The scratching load is 60 mN, and the etching solution is 20 wt.% KOH + IPA solution. The error bars displayed the statistical results of the etching height.

Guo et al. Nanoscale Research Letters 2012 7:152   doi:10.1186/1556-276X-7-152
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