Figure 4.

Effect of etching time on the nanofabrication of Si(100) surface by scratching and post-etching. The AFM image and cross-sectional profile of the nanostructure on the Si(100) surface (a) after scratching under applied normal load Fn = 60 mN and (b to d) after post-etching in 20 wt.% KOH + IPA solution for 35 min, 40 min, and 45 min, respectively.

Guo et al. Nanoscale Research Letters 2012 7:152   doi:10.1186/1556-276X-7-152
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