Detection on the mask ability of the distorted silicon layer. (a) Original Si(100) surface with native oxidation layer, (b) Si(100) surface after scratching, (c) Si(100) surface after etching in HF solution to remove surface oxidation layer. (d) Si(100) surface after etching in KOH solution.
Guo et al. Nanoscale Research Letters 2012 7:152 doi:10.1186/1556-276X-7-152