Table 1

Indenter tip, contact plane, Young's modulus (E), and hardness (H) of GaN single crystal

Indenter tip

Plane

E (GPa)

H (GPa)

Berkovich tip

(0001)

333.61 ± 2.70

19.04 ± 0.23

(11-20)

330.56 ± 2.72

15.31 ± 0.20

(10-10)

329.74 ± 3.26

15.24 ± 0.21

Conical tip

(0001)

317.34 ± 4.12

20.16 ± 0.48

(11-20)

308.26 ± 3.82

15.87 ± 0.41

(10-10)

306.96 ± 3.98

16.23 ± 0.44

Huang et al. Nanoscale Research Letters 2012 7:150   doi:10.1186/1556-276X-7-150