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Graphene bilayer structures with superfluid magnetoexcitons

Alexandr A Pikalov and Dmitrii V Fil*

Author affiliations

Institute for Single Crystals, National Academy of Sciences of Ukraine, Lenin ave. 60, Kharkov 61001, Ukraine

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Citation and License

Nanoscale Research Letters 2012, 7:145  doi:10.1186/1556-276X-7-145

Published: 21 February 2012


In this article, we study superfluid behavior of a gas of spatially indirect magnetoexcitons with reference to a system of two graphene layers embedded in a multilayer dielectric structure. The system is considered as an alternative of a double quantum well in a GaAs heterostructure. We determine a range of parameters (interlayer distance, dielectric constant, magnetic field, and gate voltage) where magnetoexciton superfluidity can be achieved. Temperature of superfluid transition is computed. A reduction of critical parameters caused by impurities is evaluated and critical impurity concentration is determined.

graphene; exciton superfluidity; multilayer heterostructures