Table 4 |
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|
Details of memory window and charge retention characteristics of different Ge NCs memory devices |
||||
|
Sample |
ΔVFB at t = 0 (V) |
Charge storage (cm-2) |
ΔVFB after 10 years (V) |
Charge loss after 10 years (%) |
|
|
||||
|
'RS-2' |
0.55 |
3.2 × 1010 |
0.29 |
47 |
|
'RA' |
3.98 |
7.6 × 1012 |
2.67 |
33 |
|
'RF' |
4.66 |
1.6 × 1013 |
2.91 |
37 |
|
'RFS' |
5.88 |
2.1 × 1013 |
4.94 |
16 |
|
|
||||
|
'RS-2', 'RA', 'RF', and 'RFS', sample structures defined in Table 1; ΔVFB, small flat-band voltage shift. |
||||
|
Das et al. Nanoscale Research Letters 2012 7:143 doi:10.1186/1556-276X-7-143 |
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