Table 4

Details of memory window and charge retention characteristics of different Ge NCs memory devices

Sample

ΔVFB at t = 0 (V)

Charge storage (cm-2)

ΔVFB after 10 years (V)

Charge loss after 10 years (%)


'RS-2'

0.55

3.2 × 1010

0.29

47

'RA'

3.98

7.6 × 1012

2.67

33

'RF'

4.66

1.6 × 1013

2.91

37

'RFS'

5.88

2.1 × 1013

4.94

16


'RS-2', 'RA', 'RF', and 'RFS', sample structures defined in Table 1; ΔVFB, small flat-band voltage shift.

Das et al. Nanoscale Research Letters 2012 7:143   doi:10.1186/1556-276X-7-143

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