Table 1

Details of various samples deposited by radio frequency magnetron sputtering system

Sample name

Tunnel oxide (nm)

Middle layer (nm)

Cap oxide (nm)

Post-deposition treatment

(°C for 30 min in N₂)

'RS-1'

SiO₂: ~5

SiGe: 15

SiO₂: 25

Annealed at 800

'RS-2'

SiO₂: ~5

SiGe: 15

SiO₂: 25

Annealed at 900

'RS-3'

SiO₂: ~5

SiGe: 15

SiO₂: 25

Annealed at 1,000

'RA'

SiO₂: ~5

Ge + Al₂O₃: 15

Al₂O₃: 25

Annealed at 900

'RF'

HfO₂: ~5

Ge + HfO₂: 15

HfO₂: 25

Annealed at 900

'RFS'

SiO₂: ~2.5

HfO₂: ~ 5

Ge+HfO₂: 15

HfO₂: 25

Annealed at 900

'RA', 'RFS', and 'RS' are sample structures.

Das et al. Nanoscale Research Letters 2012 7:143   doi:10.1186/1556-276X-7-143