Table 1

Details of various samples deposited by radio frequency magnetron sputtering system

Sample name

Tunnel oxide (nm)

Middle layer (nm)

Cap oxide (nm)

Post-deposition treatment

(°C for 30 min in N2)


'RS-1'

SiO2: ~5

SiGe: 15

SiO2: 25

Annealed at 800

'RS-2'

SiO2: ~5

SiGe: 15

SiO2: 25

Annealed at 900

'RS-3'

SiO2: ~5

SiGe: 15

SiO2: 25

Annealed at 1,000

'RA'

SiO2: ~5

Ge + Al2O3: 15

Al2O3: 25

Annealed at 900

'RF'

HfO2: ~5

Ge + HfO2: 15

HfO2: 25

Annealed at 900


'RFS'

SiO2: ~2.5

HfO2: ~ 5

Ge+HfO2: 15

HfO2: 25

Annealed at 900


'RA', 'RFS', and 'RS' are sample structures.

Das et al. Nanoscale Research Letters 2012 7:143   doi:10.1186/1556-276X-7-143

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