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Open Access Nano Review

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

Peiqiang Xu, Yang Jiang*, Yao Chen, Ziguang Ma, Xiaoli Wang, Zhen Deng, Yan Li, Haiqiang Jia, Wenxin Wang and Hong Chen

Author Affiliations

Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, No. 8, 3rd South Street, Zhongguancun, Haidian District, Beijing, 100190, People's Republic of China

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Nanoscale Research Letters 2012, 7:141  doi:10.1186/1556-276X-7-141

Published: 20 February 2012


GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.