Figure 6.

TEM image of a SiGe NR and compositional distribution of Si and Ge. (a) Cross-sectional TEM image of a SiGe NR, which is highlighted by a dotted line. (b) The composition of the SiGe NR can be characterized by the EDS line scan, where the Si and Ge compositional distribution are shown in (c) and (d), respectively.

Lai et al. Nanoscale Research Letters 2012 7:140   doi:10.1186/1556-276X-7-140
Download authors' original image