Table 1

Simulated result of RMS roughness of every layer of RTD-1, RTD-2, and RTD-3

AlAs DBL

InGaAs-strained layer

InAs QDs layer

InGaAs capping layer

AlAs UBL


RMS (nm)

RTD-1

0.15

0.19

0.31

RTD-2

0.18

0.14

6.05

0.28

0.76

RTD-3

0.17

0.15

4.62

0.17

0.18


DBL, down barrier layer; QD, quantum dot, UBL, up barrier layer; RMS, root mean square, RTD, resonant tunneling diode.

Tian et al. Nanoscale Research Letters 2012 7:128   doi:10.1186/1556-276X-7-128

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