Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode
1 Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, No.8, 3rd South Street, Zhongguancun, Haidian District, Beijing, 100190, People's Republic of China
2 Engineering Research Center of Solid-State Lighting, Department of Electrical Engineering and Automation, Tianjin Polytechnic University, No. 63 Chenglin Road, Hedong District, Tianjin, 300160, People's Republic of China
3 Department of Materials Science and Technology, Harbin Institute of Technology, 92 West Dazhi Street, Nan Gang District, Harbin, 150001, People's Republic of China
Citation and License
Nanoscale Research Letters 2012, 7:128 doi:10.1186/1556-276X-7-128Published: 14 February 2012
Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer.
73.40.GK, 73.23._b, 73.21.La, 74.62.Dh