Table 1 |
|||
|
Field emission properties of P-SiNT emitter with W-probe or -plate anode at different separations |
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|
Anode-to-cathode distance |
Enhancement factor |
Turn-on field (V/μm, at J = 10 mA/cm2) |
|
|
|
|||
|
W-probe anode |
75 nm |
3.17 |
1,286 |
|
W-plate anode |
75 nm |
436 |
603 |
|
W-plate anode |
17 μm |
616.2 |
4.617 |
|
|
|||
|
Cheng et al. Nanoscale Research Letters 2012 7:125 doi:10.1186/1556-276X-7-125 |
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