Figure 5.

PL intensity with annealing time and temperature. Evolution of the Nd3+ PL intensity at 1.37 eV for doped SiOx/SiNy MLs with annealing temperature and time. (Inset) PL spectra of as-grown Nd3+-doped SiOx/SiNy and SiOx/SiO2 MLs with equal number of periods. The thicknesses of the SiOx, SiO2, and SiNy sublayers are 3.5, 5.0, and 5.0 nm, respectively.

Nalini et al. Nanoscale Research Letters 2012 7:124   doi:10.1186/1556-276X-7-124
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