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SiOx/SiNy multilayers for photovoltaic and photonic applications

Ramesh Pratibha Nalini1*, Larysa Khomenkova1, Olivier Debieu1, Julien Cardin1, Christian Dufour1, Marzia Carrada2 and Fabrice Gourbilleau1

Author affiliations

1 CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd. Maréchal Juin, 14050 Caen Cedex 4, France

2 CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse, France

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Citation and License

Nanoscale Research Letters 2012, 7:124  doi:10.1186/1556-276X-7-124

Published: 14 February 2012


Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiOx/SiO2 counterparts offers promising future photonic applications.

PACS: 88.40.fh (Advanced materials development), (Deposition by sputtering), (Nanocrystals, nanoparticles, and nanoclusters).

SiOx/SiNy; multilayers; Nd3+ doping; photoluminescence; XRD; absorption coefficient; conductivity