Field emission from in situ-grown vertically aligned SnO2 nanowire arrays
State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
Nanoscale Research Letters 2012, 7:117 doi:10.1186/1556-276X-7-117Published: 13 February 2012
Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters.