Detection of Con A using α-man gel-modified FET. (a) Time course changes of threshold voltage [VT] of 4DS20-modified FET for additions of buffer with and without 5 μM Con A investigated at 25°C (pH = 6.9, I = 0.3 M). (b) VT shifts as a function of Con A concentration on the 4DS50-modified FET investigated at 25°C (pH = 6.9, I = 0.3 M) (n = 3).
Maeda et al. Nanoscale Research Letters 2012 7:108 doi:10.1186/1556-276X-7-108