Figure 5.

Detection of Con A using α-man gel-modified FET. (a) Time course changes of threshold voltage [VT] of 4DS20-modified FET for additions of buffer with and without 5 μM Con A investigated at 25°C (pH = 6.9, I = 0.3 M). (b) VT shifts as a function of Con A concentration on the 4DS50-modified FET investigated at 25°C (pH = 6.9, I = 0.3 M) (n = 3).

Maeda et al. Nanoscale Research Letters 2012 7:108   doi:10.1186/1556-276X-7-108
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