Figure 3.

Microscope photographs of surface morphology. Microscope photographs of surface morphology of Ti/Al/Ta/Au (20/80/40/100 nm) ohmic stacks with different SiNx thicknesses after annealing at 850°C for 30 s: (a) with 50-nm SiNx encapsulation layer, (b) 100-nm SiNx encapsulation layer, (c) 150-nm SiNx encapsulation layer, and (d) 200-nm SiNx encapsulation layer.

Wang and Kim Nanoscale Research Letters 2012 7:107   doi:10.1186/1556-276X-7-107
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