Figure 6.

Two-point probe DC measurement across two interconnection bumps measured across the carrier substrate's input and output. The CNT bump dimensions were 150 × 150 μm. (a) Similar I-V characteristics were observed to demonstrate the concept of reworkable process using this form of joining methodology. (b) Equivalent electrical circuit for the measured resistances and CNT interconnection bump.

Yap et al. Nanoscale Research Letters 2012 7:105   doi:10.1186/1556-276X-7-105
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