Figure 5.

Cross sectional SEM image of the GaAs layer on SiO2-patterned 5°-off (001) GaAs substrate, when W0 was 655 nm. The front direction of GaAs layer was rotated about 30° from <a onClick="popup('','MathML',630,470);return false;" target="_blank" href="">View MathML</a> direction.

Kim et al. Nanoscale Research Letters 2012 7:104   doi:10.1186/1556-276X-7-104
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