Figure 4.

μ-PL spectra of an In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned 5°-off (001) GaAs substrate with the excitation power of He-Ne laser were (a) 0.4, (b) 2, (c) 3.17, and (d) 4 meV, respectively. (W(001):150 nm).

Kim et al. Nanoscale Research Letters 2012 7:104   doi:10.1186/1556-276X-7-104
Download authors' original image