|
Resolution: standard / high Figure 4.
μ-PL spectra of an In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned 5°-off (001) GaAs substrate with the excitation power of He-Ne laser were
(a) 0.4, (b) 2, (c) 3.17, and (d) 4 meV, respectively. (W(001):150 nm).
Kim et al. Nanoscale Research Letters 2012 7:104 doi:10.1186/1556-276X-7-104 |
