Figure 3.

(a) The μ-PL spectrum of In0.8Ga0.2As SAQDs grown on unpatterned 5°-off (001) GaAs substrates and μ-PL spectra at 4.0 K of the In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned 5°-off (001) GaAs substrates with W(001) of (b) 0, (c) 60, (d) 110, and (e) 150 nm, respectively.

Kim et al. Nanoscale Research Letters 2012 7:104   doi:10.1186/1556-276X-7-104
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