Figure 2.

μ-PL spectra at 4.0 K of the In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned exact (001) GaAs substrates with W(001) of (a) 20, (b) 40, (c) 70, (d) 100, and (e) 140 nm, respectively.

Kim et al. Nanoscale Research Letters 2012 7:104   doi:10.1186/1556-276X-7-104
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