Figure 1.

SEM images of In0.8Ga0.2As SAQDs on GaAs buffer layers were formed on SiO2-patterned exact (001) GaAs substrate with W0 of (a) 275 and (b) 630 nm, respectively. SEM images of In0.8Ga0.2As SAQDs on GaAs buffer layers were formed on SiO2-patterned 5°-off (001) with W0 of (c) 285 and (d) 730 nm, respectively.

Kim et al. Nanoscale Research Letters 2012 7:104   doi:10.1186/1556-276X-7-104
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